Paper Contents
Abstract
Focused Electron Beam Induced Deposition (FEBID) of pure SiO2 has been successfully demonstrated on a 150 nm-thick Al layer evaporated on Silicon wafers. The process uses tetramethylsilane (TMS) precursor, and the addition of sufficient amounts of water vapor is critical to achieving pure SiO2 deposition. The resulting deposits exhibit nearly 100% transmission at a 193 nm wavelength, making them suitable for Deep Ultraviolet Light (DUV) optical applications. The H2O vapor-assisted FEBID process involves the simultaneous deposition of pure SiO2 and the etching of contaminants. Additionally, the study explores the influence of varying dwell times on the deposition dynamics and the required water vapor flow for achieving pure SiO2, leading to high-quality materials for advanced optical applications.
Copyright
Copyright © 2025 Lassaad Ajili. This is an open access article distributed under the Creative Commons Attribution License.
