Paper Contents
Abstract
This paper presents the comprehensive study of the Dual-halo Dual-dielectric triple-material surrounding-gate (DH-DD-TM-SG) MOSFET. The idea of combining the channel, gate and dielectric engineering drastically improves the performance of device by virtue of reduction in SCEs. The device performance has been evaluated in terms of DIBL, threshold voltage roll-off and output characteristics. The comparison has been carried out with triple-material surrounding-gate MOSFET using TCAD Silvaco. The proposed device exhibits superior performance than TM-SG MOSFET by reducing SCEs and enhancement in transconductance. This makes device suitable for analog and RF applications.
Copyright
Copyright © 2025 Neeraj Gupta. This is an open access article distributed under the Creative Commons Attribution License.
