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PERFORMANCE COMPARISON OF PLANAR AND COAXIAL CARBON NANOTUBE FIELD EFFECT TRANSISTOR

Ida Hope P Hope P

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Abstract

The two CNTFET orientations that are being compared in this paper are planar and coaxial in order to evaluate their performance. Modelling various performance parameters, such as IV characteristics, density of state (DOS) vs. energy, potential vs. distance, transmission coefficient vs. energy, and density vs. distance, has been used in studies and research the data demonstrate that both orientations display distinct performance patterns for a number of variables. The highest drain current is calculated for the same chirality and tube length (L 5 nm and 20 nm) for planner orientation and coaxial orientation. The density vs. distance map for different chiralitys is used to calculate the maximum charge carrier density in coaxial and planner systems. In this project, comparative analysis of planar and coaxial orientation of carbon field effect transistors are analyzed.

Copyright

Copyright © 2023 Ida Hope P. This is an open access article distributed under the Creative Commons Attribution License.

Paper Details
Paper ID: IJPREMS30800001987
ISSN: 2321-9653
Publisher: ijprems
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