Paper Contents
Abstract
Complementary metal oxide semiconductor (CMOS) technology has advanced so rapidly over the previous three decades that no one in developed nations can now survive without it. In place of traditional MOS transistors, modern integrated circuits (ICs) use FinFET. Short channel lengths were necessary and are now practicable to achieve quicker speeds and greater package densities. Leakage currents and other undesirable effects have recently been linked to short channel lengths. The thickness of the gate oxide is scaled in proportion to channel length (L) and breadth to prevent the short channel effect (SCE) and maintain a constant electric field in the oxide. By using a Double Gate (DG) TFET transistor, the proposed approach replaces the FinFET prevalent in modern technology.
Copyright
Copyright © 2023 Murugan M. This is an open access article distributed under the Creative Commons Attribution License.
